刘丽,吕腾博,刘嘉乐,程乾,王小力

• 1:沈阳大学师范学院
• 2:西安交通大学微电子学院
• 3:西安交通大学物理学院

摘要(Abstract)：

本文介绍了利用射频磁控溅射技术在氧化硅衬底上制备非晶氧化铟镓锌(a-IGZO)薄膜，对溅射的薄膜进行了不同条件下的特性分析，制备成a-IGZO薄膜晶体管(a-IGZO TFT),并分别研究了溅射气氛、有源层厚度和退火工艺对器件电学性能的影响。实验表明，当使用50W的溅射功率时，溅射过程中补充氧气，可以填补材料的深能级氧空位缺陷，提高了器件性能。但氧气浓度过大也会造成吸附氧等受主缺陷增多，更易发生载流子的散射，实验中采用氩氧比为Ar∶O_2=24∶1.2的条件器件性能较好。其次，当有源层厚度控制在40～50nm时，器件性能较好，且40nm的薄膜性质更佳。最后，高温退火工艺可以改善薄膜的缺陷，消除薄膜内部原有应力。相比氮气退火条件，将薄膜在空气下退火可以实现更好的电学特性，将40nm的薄膜在空气下400℃退火30min, a-IGZO TFT的性能达到最佳，其迁移率为15.43cm~2/(V·s),阈值电压为13.09V,电流开关比为7.3×10~8,为将来制备晶圆级的高迁移a-IGZO TFT奠定了基础。

关键词(KeyWords)： 铟镓锌氧化物;薄膜晶体管;磁控溅射;有源层厚度;退火

Abstract:

Keywords:

基金项目(Foundation): 陕西省重点研发计划项目(2023-YBSF-407)

作者(Author): 刘丽,吕腾博,刘嘉乐,程乾,王小力

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